The effect of ultrasound on the annealing of radiation defects in neutron-doped germanium

The temperature characteristics (in the range 77-330 K) of the electrical parameters of neutron-doped germanium samples (the tin doping level in the initial germanium N-Sb = 4 x 10(18) cm(-3) and the integrated thermal neutron flux Phi(n) similar or equal to 10(15) cm(-2)), subjected to isochronal annealing in the temperature range 90-210 degrees C, were investigated with the aid of the Hall effect. In addition to annealing, some samples were subjected to the action of ultrasound with frequency f = 5 - 10 MHz and power density W = 1 W/cm(2). It was found that ultrasound stimulates the low-temperature stage of reverse annealing of radiation defects in neutron-doped germanium. (C) 1996 American Institute of Physics.