Controlled tungsten doping of vanadium dioxide grown through alternating-target pulsed laser deposition

被引：2

作者：

Andrews, Keller ^{[1
,2
]}

Kaye, Anthony B. ^{[3
]}

机构：

[1] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA

[2] Texas Tech Univ, Nano Tech Ctr, Lubbock, TX 79409 USA

[3] US Air Force, Nucl Weap Ctr, 1551 Wyoming Blvd, Kirtland AFB, NM 87117 USA

来源：

MATERIALS RESEARCH EXPRESS | 2019年 / 6卷 / 05期

关键词：

metal-insulator transition; vanadium dioxide; pulsed-laser deposition; PHASE-TRANSITION; THERMOCHROMIC PROPERTIES; INSULATOR-TRANSITION; METAL; SEMICONDUCTOR; TEMPERATURE; OXIDES;

D O I：

10.1088/2053-1591/aaff05

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of vanadium dioxide were grown with various fractions of tungsten doping controlled during growth through alternating-target pulsed laser deposition. A range of V1-xWxO2 films were grown on (0001) sapphire substrates with x values on intervals from x = [0, 0.025]. The metal-insulator transition temperature was measured through the change in infrared transmission, and the change in transition temperature as a function of the dopant-fraction x was found to be -18.89 degrees C per atomic percent tungsten, consistent with studies using various other forms of growth.

引用

页数：8

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