Derivation of threshold voltage and drain current for cylindrical MOSFET and application to a recessed MOSFET

被引：1

作者：

Ananthan, Venkat ^{[1
]}

Yang, Rongsheng ^{[1
]}

Mouli, Chandra ^{[1
]}

机构：

[1] Proc R&D Micron Technol, Boise, ID 83716 USA

来源：

2008 IEEE WORKSHOP ON MICROELECTRONICS AND ELECTRON DEVICES (WMED) | 2008年

关键词：

cylindrical MOSFET; threshold voltage; recessed gate MOSFET;

D O I：

10.1109/WMED.2008.4510655

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Threshold voltage and drive current for a cylindrical MOSFET have been rigorously derived for the first time. An approximate expression for these quantities is presented for the purpose of analytical calculations. The model has been verified against TCAD simulations. The characteristics of a recessed gate MOSFET is analysed using these models.

引用

页码：9 / 11

页数：3