Recrystallization and Reactivation of Dopant Atoms in Ion-Implanted Silicon Nanowires

被引：22

作者：

Fukata, Naoki ^{[1
]}

Takiguchi, Ryo ^{[2
]}

Ishida, Shinya ^{[2
]}

Yokono, Shigeki ^{[2
]}

Hishita, Shunichi ^{[1
]}

Murakami, Kouichi ^{[2
]}

机构：

[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan

[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

ACS NANO | 2012年 / 6卷 / 04期

基金：

日本科学技术振兴机构;

关键词：

silicon nanowires; boron; phosphorus; implantation; DOPED SILICON; LASER-ABLATION;

D O I：

10.1021/nn300189z

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Recrystallization of silicon nanowires (SiNWs) after ion Implantation strongly depends on the Ion doses and species. Full amorphization by high-dose Implantation Induces polycrystal structures in SiNWs even after high-temperature annealing, with this tendency more pronounced for heavy ions. Hot-implantation techniques dramatically suppress polycrystallization in SiNWs, resulting in reversion to the original single-crystal structures and consequently high reactivation rate of dopant atoms. In this study, the chemical bonding states and electrical activities of implanted boron and phosphorus atoms were evaluated by Raman scattering and electron spin resonance, demonstrating the formation of p- and n-type SiNWs.

引用

页码：3278 / 3283

页数：6

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