Response of a PIN Diode and SOI Microdosimeter to the TSL Quasi-Monoenergetic Neutron Field

被引：1
|
作者：
Prokopovich, Dale Anthony [1 ,2 ]
Reinhard, M. I. [1 ,2 ]
Cornelius, Iwan M. [2 ]
Rosenfeld, Anatoly B. [2 ]
机构：
[1] Australian Nucl Sci & Technol Org ANSTO, Lucas Heights, NSW 2234, Australia
[2] Univ Wollongong, Ctr Med Radiat Phys, Wollongong, NSW 2500, Australia
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 06期
关键词：
Dosimetry; microdosimetry; neutron beams; silicon on insulator technology; RADIATION; SIMULATION;
D O I：
10.1109/TNS.2011.2167241
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The response of a Silicon On Insulator (SOI) Micro-dosimeter and a silicon PIN diode were tested at the TSL quasi-monoenergetic neutron beamline at Uppsala university. The objective was to determine the response of both the SOI Microdosimeter and silicon PIN diode to a high energy quasi-monoenergetic neutron field for potential future application of the devices in aviation dosimetry. PIN diode angular response dependence was also measured to determine the suitability of PIN diodes in a multidirectional high energy neutron field as encountered in aviation environments. Simulations of the response from the SOI Microdosimeter and PIN diode to the field using GEANT4 were obtained to assist in interpreting the experimental measurements.
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收藏
页码：3321 / 3327
页数：7
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