Study on stress relaxation behavior of silicon carbide by BSR method

被引：8

作者：

Abe, Kazuma ^{[1
]}

Nogami, Shuhei ^{[1
]}

Hasegawa, Akira ^{[1
]}

Nozawa, Takashi ^{[2
]}

Hinoki, Tatsuya ^{[3
]}

机构：

[1] Tohoku Univ, Dept Quantum Sci & Energy Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan

[2] Japan Atom Energy Agcy, Naka, Ibaraki 3191195, Japan

[3] Kyoto Univ, Inst Adv Energy, Uji, Kyoto 6110011, Japan

来源：

JOURNAL OF NUCLEAR MATERIALS | 2011年 / 417卷 / 1-3期

关键词：

TENSILE CREEP; FIBERS; COMPOSITES; DIFFUSION;

D O I：

10.1016/j.jnucmat.2011.02.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bend stress relaxation (BSR) experiment at temperatures of 600-1400 degrees C for 1-100 h was performed on the two types of highly crystallized monolithic silicon carbide (SiC) produced by chemically vapor deposition (CVD) and liquid phase sintering (LPS) methods. Both materials exhibited similar time-dependent trend of stress relaxation. The BSR ratio dropped rapidly during the first hour of the tests and then decreased gradually in the higher temperature tests. The CVD-SiC and the LPS-SiC showed good thermal creep resistance at the expected operating temperature (about 600-1000 degrees C) of fusion blanket using SiC fiber-reinforced SIC matrix (SiC/SiC) composite. On the other hand, the BSR ratio of those two materials, especially of the LPS-SiC, dropped steeply at the temperatures of 1200-1400 degrees C. The activation energy of the stress relaxation calculated by a cross-cut method increased with the temperature. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：356 / 358

页数：3

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