Near-infrared luminescence of OH- and Cl- doped Bi4Ge3O12 crystals

被引：0

作者：

Yu, Pingsheng ^{[1
]}

Su, Liangbi ^{[2
]}

Xu, Jun ^{[2
]}

机构：

[1] Yancheng Inst Technol, Sch Mat Engn, Yancheng 224051, Jiangsu, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Transparent & Optofunct Inorgan Mat, Shanghai 200050, Peoples R China

来源：

INFRARED PHYSICS & TECHNOLOGY | 2012年 / 55卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Bi4Ge3O12; OH-; doped; Cl-; BGO; DEFECTS; GROWTH; CR4+;

D O I：

10.1016/j.infrared.2011.10.004

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

OH- and Cl- doped Bi4Ge3O12 (BOO) single crystals had been grown by Vertical Bridgman (VB) method. The structure of these crystals was determined by XRD, the transmittance and emission spectra in near infrared region (NIR) were measured at room temperature. 5% OH- doped BGO shows a significant emission band peaking around 1181 nm under 808 nm laser diodes (LDs) excitation, and the 5% Cl- doped BGO exhibits a relatively weak emission band as well. 100% and 5% OH- doped BGO show noticeable emission band centered at about 1346 nm under 980 nm LDs excitation. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：146 / 149

页数：4

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