Microstructure formation during BiMn/Bi eutectic growth with applied alternating electric fields

被引:13
作者
Ma, Y
Zheng, LL
Larson, DJ
机构
[1] SUNY Stony Brook, Dept Mech Engn, Stony Brook, NY 11794 USA
[2] SUNY Stony Brook, Dept Mat Sci & Engn, Stony Brook, NY 11794 USA
基金
美国国家航空航天局; 美国国家科学基金会;
关键词
directional solidification; eutectic growth; microstructure formation; alternating current;
D O I
10.1016/j.jcrysgro.2003.10.018
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The thermal and fluid effects caused by applied alternating electric fields during BiMn/Bi eutectic directional solidification is analyzed. The computational model for numerical analysis includes detailed analysis of the electrical and magnetic fields caused by the alternating current (AC) which results in an oscillating freezing rate pattern. This is presented, as well as the corresponding eutectic microstructure spacing. In this paper, numerical results demonstrated that in addition to process parameters, microstructure formation depends on the frequency of the applied AC, and it changes spontaneously as the alternating electric field is applied. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:620 / 630
页数:11
相关论文
共 16 条
[1]  
[Anonymous], 1990, MAGNETOHYDRODYNAMICS
[2]   DIRECTIONAL SOLIDIFICATION OF A PLANAR INTERFACE IN THE PRESENCE OF A TIME-DEPENDENT ELECTRIC-CURRENT [J].
BRUSH, LN ;
CORIELL, SR ;
MCFADDEN, GB .
JOURNAL OF CRYSTAL GROWTH, 1990, 102 (04) :725-742
[3]   Applications of morphological stability theory [J].
Coriell, SR ;
McFadden, GB .
JOURNAL OF CRYSTAL GROWTH, 2002, 237 :8-13
[4]   Numerical simulation and validation of the Peltier pulse marking of solid/liquid interfaces [J].
Corre, S ;
Duffar, T ;
Bernard, M ;
Espezel, M .
JOURNAL OF CRYSTAL GROWTH, 1997, 180 (3-4) :604-614
[5]   Structure, magnetic, and magneto-optical properties of MnBi films grown on quartz and (001) GaAs substrates [J].
Harder, KU ;
Menzel, D ;
Widmer, T ;
Schoenes, J .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3625-3629
[6]   APPLICATION OF INTERFACE DEMARCATION TO MULTIPHASE SYSTEMS - INSB-SB EUTECTIC [J].
HOLMES, DE ;
GATOS, HC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (11) :1873-1875
[7]   Quantitative analysis of the influence of Peltier interface demarcation on directional solidification [J].
Li, Q ;
Thi, HN ;
Billia, B .
JOURNAL OF CRYSTAL GROWTH, 1996, 167 (1-2) :277-284
[8]   MODULATION OF DOPANT SEGREGATION BY ELECTRIC CURRENTS IN CZOCHRALSKI-TYPE CRYSTAL GROWTH [J].
LICHTENSTEIGER, M ;
WITT, AF ;
GATOS, HC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) :1013-+
[9]   STUDIES OF PLANE-FRONT SOLIDIFICATION AND MAGNETIC-PROPERTIES OF BI-MNBI [J].
PIRICH, RG ;
LARSON, DJ ;
BUSCH, G .
AIAA JOURNAL, 1981, 19 (05) :589-594
[10]   Application of the theorem of minimum entropy production to growth of lamellar eutectics with an oscillating freezing rate [J].
Popov, DI ;
Regel, LL ;
Wilcox, WR .
JOURNAL OF CRYSTAL GROWTH, 2000, 209 (01) :181-197