X-Ray Imaging of Structural Defects in Si1-xGex Single Crystals Using a White Synchrotron Beam

被引:2
作者
Argunova, T. S. [1 ]
Zabrodskii, A. G. [1 ]
Sorokin, L. M. [1 ]
Abrosimov, N. V. [2 ,3 ]
Je, J. H. [4 ]
机构
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Inst Crystal Growth, D-12489 Berlin, Germany
[3] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia
[4] Pohang Univ Sci & Technol, Pohang 790784, South Korea
关键词
ELECTRICAL-PROPERTIES; SIGE; RADIATION; IMAGES;
D O I
10.1134/S1063774511050038
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Nonmonochromatic (white) synchrotron radiation with a high spatial coherence makes it possible to use different types of interaction of X-rays with matter simultaneously: diffraction, refraction, absorption, and fluorescence. In this case, the structure of materials is studied by the real-time recording of high-resolution images of different types under the same conditions. The use of X-ray images for studying the structural quality is demonstrated by the example of Czochralski-grown Si1-xGex single crystals. The effect that the germanium content has on the formation and evolution of the defect structure is analyzed and the relationship between the structure and properties is investigated. The experiments were performed on the Pohang Light Source (Pohang, Republic of Korea). DOI: 10.1134/S1063774511050038
引用
收藏
页码:811 / 818
页数:8
相关论文
共 22 条
[1]   Mosaic and gradient SiGe single crystals for gamma ray Laue lenses [J].
Abrosimov, N. V. .
EXPERIMENTAL ASTRONOMY, 2005, 20 (1-3) :185-194
[2]   Czochralski growth of Si- and Ge-rich SiGe single crystals [J].
Abrosimov, NV ;
Rossolenko, SN ;
Thieme, W ;
Gerhardt, A ;
Schroder, W .
JOURNAL OF CRYSTAL GROWTH, 1997, 174 (1-4) :182-186
[3]   Structural and electrical properties of the GexSi1-x/Si heterojunctions obtained by the method of direct bonding [J].
Argunova, T. S. ;
Belyakova, E. I. ;
Grekhov, I. V. ;
Zabrodskii, A. G. ;
Kostina, L. S. ;
Sorokin, L. M. ;
Shmidt, N. M. ;
Yi, J. M. ;
Jung, J. W. ;
Je, J. H. ;
Abrosimov, N. V. .
SEMICONDUCTORS, 2007, 41 (06) :679-683
[4]   Investigation of dislocations in Czochralski grown Si1-xGex single crystals [J].
Argunova, T. S. ;
Jung, J. W. ;
Je, J. H. ;
Abrosimov, N. V. ;
Grekhov, I. V. ;
Kostina, L. S. ;
Rozhkov, A. V. ;
Sorokin, L. M. ;
Zabrodskii, A. G. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (08)
[5]   Computer Simulation of Phase-Contrast Images in White Synchrotron Radiation Using Micropipes in Silicon Carbide [J].
Argunova, T. S. ;
Kohn, V. G. ;
Je, Jung Ho .
JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES, 2008, 2 (06) :861-865
[6]   Synchrotron radiography and x-ray topography studies of hexagonal habitus SiC bulk crystals [J].
Argunova, TS ;
Gutkin, MY ;
Je, JH ;
Kang, HS ;
Hwu, Y ;
Tsai, WL ;
Margaritondo, G .
JOURNAL OF MATERIALS RESEARCH, 2002, 17 (10) :2705-2711
[7]  
Bowen K., 1998, HIGH RESOLUTION XRAY
[8]   Phase objects in synchrotron radiation hard x-ray imaging [J].
Cloetens, P ;
Barrett, R ;
Baruchel, J ;
Guigay, JP ;
Schlenker, M .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1996, 29 (01) :133-146
[9]   Electrical properties of lightly doped p-type silicon-germanium single crystals [J].
Gaworzewski, P ;
Tittelbach-Helmrich, K ;
Penner, U ;
Abrosimov, NV .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (10) :5258-5263
[10]   Structural and Electrical Properties of SiGe-on-Insulator Substrates Fabricated by Direct Bonding [J].
Grekhov, I. V. ;
Kostina, L. S. ;
Argunova, T. S. ;
Belyakova, E. I. ;
Rozkov, A. V. ;
Shmidt, N. M. ;
Yusupova, Sh. A. ;
Je, J. H. .
SEMICONDUCTORS, 2010, 44 (08) :1101-1105