Near band-gap photoluminescence of InN due to Mahan excitons

被引：4

作者：

Feneberg, Martin ^{[1
]}

Daeubler, Juergen ^{[1
]}

Thonke, Klaus ^{[1
]}

Sauer, Rolf ^{[1
]}

Schley, Pascal ^{[2
]}

Goldhahn, Ruediger ^{[2
]}

机构：

[1] Univ Ulm, Inst Halbleiterphys, D-89069 Ulm, Germany

[2] Tech Univ Ilmenau, Inst Phys, D-98684 Ilmenau, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷

关键词：

ABSORPTION; SPECTRA;

D O I：

10.1002/pssc.200880920

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The luminescence spectrum of degenerately n-type doped hexagonal InN extends to energies significantly higher than the renormalized band edge of the material. The line shape cannot be explained by simple band-filling. Reflectivity spectra reveal at low temperatures a strongly enhanced intensity at the Fermi energy which we ascribe to a Fermi edge singularity of the electrons interacting with holes to form so-called Mahan excitons. High k-values of the holes recombining with Fermi edge electrons are provided by localization at acceptors. A weak binding energy for a Mahan exciton is expected due to screening of the electron liquid in the conduction band. The concept of Mahan excitons allows us to understand the observed near band gap photoluminescence spectra. [GRAPHICS] . (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：S385 / S388

页数：4

共 12 条

[1] Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
Arnaudov, B
Paskova, T
Paskov, PP
Magnusson, B
Valcheva, E
Monemar, B
Lu, H
Schaff, WJ
Amano, H
Akasaki, I
[J]. PHYSICAL REVIEW B, 2004, 69 (11):
[2] Davydov VY, 2002, PHYS STATUS SOLIDI B, V229, pR1, DOI 10.1002/1521-3951(200202)229:3<R1::AID-PSSB99991>3.0.CO
[3] 2-O
[4] Mahan excitons in degenerate wurtzite InN:: Photoluminescence spectroscopy and reflectivity measurements
Feneberg, Martin
Daeubler, Juergen
Thonke, Klaus
Sauer, Rolf
Schley, Pascal
Goldhahn, Ruediger
[J]. PHYSICAL REVIEW B, 2008, 77 (24):
[5] Acceptor states in the photoluminescence spectra of n-InN -: art. no. 195207
Klochikhin, AA
Davydov, VY
Emtsev, VV
Sakharov, AV
Kapitonov, VA
Andreev, BA
Lu, H
Schaff, WJ
[J]. PHYSICAL REVIEW B, 2005, 71 (19):
[6] Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy
Koblmuller, G.
Gallinat, C. S.
Bernardis, S.
Speck, J. S.
Chern, G. D.
Readinger, E. D.
Shen, H.
Wraback, M.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (07)
[7] Donor and acceptor concentrations in degenerate InN
Look, DC
Lu, H
Schaff, WJ
Jasinski, J
Liliental-Weber, Z
[J]. APPLIED PHYSICS LETTERS, 2002, 80 (02) : 258 - 260
[8] Temperature invariance of InN electron accumulation
Piper, LFJ
Veal, TD
Mahboob, I
McConville, CF
Lu, H
Schaff, WJ
[J]. PHYSICAL REVIEW B, 2004, 70 (11): : 115333 - 1
[9] Dielectric function and van hove singularities for in-rich InxGa1-xN alloys:: Comparison of n- and metal-face materials
Schley, P.
Goldhahn, R.
Winzer, A. T.
Gobsch, G.
Cimalla, V.
Ambacher, O.
Lu, H.
Schaff, W. J.
Kurouchi, M.
Nanishi, Y.
Rakel, M.
Cobet, C.
Esser, N.
[J]. PHYSICAL REVIEW B, 2007, 75 (20):
[10] Dielectric function of cubic InN from the mid-infrared to the visible spectral range
Schley, P.
Goldhahn, R.
Napierala, C.
Gobsch, G.
Schoermann, J.
As, D. J.
Lischka, K.
Feneberg, M.
Thonke, K.
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (05)

← 1 2 →