Error-Correcting Codes for Flash Coding

被引：19

作者：

Huang, Qin ^{[1
]}

Lin, Shu ^{[1
]}

Abdel-Ghaffar, Khaled A. S. ^{[1
]}

机构：

[1] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA

来源：

IEEE TRANSACTIONS ON INFORMATION THEORY | 2011年 / 57卷 / 09期

基金：

美国国家科学基金会;

关键词：

Block-erasure; block-write; concatenated code; controllable error; error-correcting code; flash code; memory rate; WOM code; CAPACITY;

D O I：

10.1109/TIT.2011.2162262

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Flash memory is a nonvolatile computer storage device which consists of blocks of cells. While increasing the voltage level of a single cell is fast and simple, reducing the level of a cell requires the erasing of the entire block containing the cell. Since block-erasures are costly, flash coding schemes have been developed to maximize the number of writes before a block-erasure is needed. A novel coding scheme based on error-correcting codes is presented that allows the cell levels to increase as evenly as possible and as a result, increases the number of writes before a block-erasure. The scheme is based on the premise that cells whose levels are higher than others need not be increased. This introduces errors in the recorded data which can be corrected by an error-correcting code provided that the number of erroneous cells is within the error-correcting capability of the code. The scheme is also capable of combating noise, causing additional errors and erasures, in flash memories in order to enhance data reliability. For added flexibility, the scheme can be combined with other flash codes to yield concatenated schemes of high memory rates.

引用

页码：6097 / 6108

页数：12

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