Study of p-type carbon doping on In0.53Ga0.47As, In0.52Al0.2Ga0.28As and In0.52Al0.48As

被引：2
|
作者：
Yan, J [1 ]
Ru, G [1 ]
Gong, Y [1 ]
Choa, FS [1 ]
机构：
[1] Univ Maryland Baltimore Cty, Dept Comp Sci & Elect Engn, Baltimore, MD 21228 USA
来源：
APPLICATIONS OF PHOTONIC TECHNOLOGY 6: CLOSING THE GAP BETWEEN THEORY, DEVELOPMENT, AND APPLICATION | 2003年 / 5260卷
关键词：
carbon doping; MOCVD growth; InGaAs; InAlAs; InAlGaAs; V/III ratio; C/In ratio;
D O I：
10.1117/12.543715
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The incorporation of carbon into In0.53Ga0.47As, In0.52As and In0.52Al0.2Ga0.28As lattice matched to InP was investigated using carbon tetrabromide (CBr4) as the carbon source in Metalorganic Chemical Vapor Deposition (MOCVD) growth. The parameters and growth conditions are optimized to get high p-type doping for photonic device applications. This is among the first few studies on C-doping in InAlAs and InAlGaAs, and the results show that the presence of Al also efficiently helps to obtain high p-type carbon doping.
引用
收藏
页码：446 / 449
页数：4
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