Substrate removal and BOX thinning effects on total dose response of FDSOI NMOSFET

被引：21
作者：
Gouker, P
Burns, J
Wyatt, P
Warner, K
Austin, E
Milanowski, R
机构：
[1] MIT, Lincoln Lab, Lexington, MA 02420 USA
[2] Dynam Res Corp, San Diego, CA USA
[3] Titan Corp, San Diego, CA 92121 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2003年 / 50卷 / 06期
关键词：
fully depleted silicon-on-insulator (FDSOI); low-temperature wafer bonding; substrate and buried oxide thinning effects; total dose effects; total dose tolerance; X-ray irradiation;
D O I：
10.1109/TNS.2003.821822
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We studied the total dose radiation effects from an X-ray source in submicron fully depleted n-channel field effect transistors on conventional SOI wafers, after substrate removal, and after buried oxide thinning. A significant enhancement in radiation tolerance is observed both after substrate removal and after subsequent buried oxide thinning.
引用
收藏
页码：1776 / 1783
页数：8
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