The study of ferroelectric La-doped PbTiO3 thin films prepared by RF magnetron sputtering

被引：2

作者：

Yang, CT ^{[1
]}

Zhang, SR ^{[1
]}

Liu, JS ^{[1
]}

Wu, MQ ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Coll Microelect & Solid Elect, Chengdu 610054, Peoples R China

来源：

INTEGRATED FERROELECTRICS | 2003年 / 52卷

关键词：

PbTiO; 3; thin film; ferroelectric; pyroelectric;

D O I：

10.1080/10584580390254970

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ferroelectric La-modified lead titanate (PLT) thin film were grown on Pt/Ti/SiO2/Si by sputtering the Pb0.93La0.07TiO3 targets containing an amounts of excess 8% PbO. The effects of sputtering and annealing conditions on the crystalline structures and the surface morphologies of the PLT thin films have been investigated. The remanent polarization (Pr) and the coercive field of the PLT film through rapid thermal annealing (RTA) was 10.2 muC/cm(2) and 45 kV/cm respectively. The maximum pyroelectric coefficient reached 19 nC/cm(2) .K at 20degreesC.

引用

页码：223 / 228

页数：6

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