Efficient spin filtering in a disordered semiconductor superlattice in the presence of Dresselhaus spin-orbit coupling

被引:4
作者
Mahani, Mohammad Reza Khayatzadeh [1 ]
Faizabadi, Edris [2 ]
机构
[1] KNT Univ Technol, Fac Sci, Dept Phys, Tehran, Iran
[2] Iran Univ Sci & Technol, Dept Phys, Tehran 16844, Iran
关键词
spintronics; spin dynamics; spin polarization; Dresselhaus spin-orbit coupling;
D O I
10.1016/j.physleta.2007.10.071
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The influence of the Dresselhaus spin-orbit coupling on spin polarization by tunneling through a disordered semiconductor superlattice, was investigated. The Dresselhaus spin-orbit coupling causes the spin polarization of the electron due to transmission possibilities difference between spin up and spin down electrons. The electron tunneling through a zinc-blende semiconductor superlattice with InAs and GaAs layers and two variable distance ln(x)Ga((1-x))As impurity layers was studied. One hundred percent spin polarization was obtained by optimizing the distance between two impurity layers and impurity percent in disordered layers in the presence of Dresselhaus spin-orbit coupling. In addition, the electron transmission probability through the mentioned superlattice is too much near to one and an efficient spin filtering was recommended. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:1926 / 1929
页数:4
相关论文
共 21 条
[1]   SPIN-ORBIT COUPLING EFFECTS IN ZINC BLENDE STRUCTURES [J].
DRESSELHAUS, G .
PHYSICAL REVIEW, 1955, 100 (02) :580-586
[2]  
FIELDERLING R, 1999, NATURE, V402, P787
[3]   Spin-polarized resonant tunneling in double-barrier structures [J].
Gnanasekar, K ;
Navaneethakrishnan, K .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 28 (03) :328-332
[4]   Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor [J].
Hanbicki, AT ;
Jonker, BT ;
Itskos, G ;
Kioseoglou, G ;
Petrou, A .
APPLIED PHYSICS LETTERS, 2002, 80 (07) :1240-1242
[5]   Spin-polarized transport in a two-dimensional electron gas with interdigital-ferromagnetic contacts [J].
Hu, CM ;
Nitta, J ;
Jensen, A ;
Hansen, JB ;
Takayanagi, H .
PHYSICAL REVIEW B, 2001, 63 (12)
[6]   Robust electrical spin injection into a semiconductor heterostructure [J].
Jonker, BT ;
Park, YD ;
Bennett, BR ;
Cheong, HD ;
Kioseoglou, G ;
Petrou, A .
PHYSICAL REVIEW B, 2000, 62 (12) :8180-8183
[7]  
Kane E.O, 1969, Tunneling Phenomenon in Solids
[8]   BAND STRUCTURE OF INDIUM ANTIMONIDE [J].
KANE, EO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261
[9]   Electrical spin injection in a ferromagnetic semiconductor heterostructure [J].
Ohno, Y ;
Young, DK ;
Beschoten, B ;
Matsukura, F ;
Ohno, H ;
Awschalom, DD .
NATURE, 1999, 402 (6763) :790-792
[10]   Spin-dependent tunneling through a symmetric semiconductor barrier [J].
Perel', VI ;
Tarasenko, SA ;
Yassievich, IN ;
Ganichev, SD ;
Bel'kov, VV ;
Prettl, W .
PHYSICAL REVIEW B, 2003, 67 (20)