Ternary Al2xIn2-2xO3 films with tunable optical band gap prepared on YSZ (100) substrates by metal organic chemical vapor deposition

The ternary Al2xIn2-2xO3 films with different Al contents of x [Al/(Al + In) atomic ratio] have been fabricated on the Y-stabilized ZrO2 (YSZ) (100) substrates by the metal organic chemical vapor deposition (MOCVD) method at 700 degrees C. The influence of various Al contents (x = 0.1-0.9) on the structural, electrical and optical properties of the films have been investigated. Structural analyses revealed a phase transition from the bixbyite In2O3 structure with a single orientation along (100) to the amorphous structure as the Al content increases from 10% to 90%. The lowest resistivity of 4.84 x 10(-3) Omega cm with a carrier concentration of 1.1 x 10(20) cm(-3) and a Hall mobility of 11.74 cm(2) V-1 s(-1) were obtained for the sample with x = 0.2. The average transmittances for the Al2xIn2-2xO3 films in the visible range were all over 77% and the optical band gap of the films could be modulated from 3.67 to 4.73 eV. (C) 2015 Elsevier B.V. All rights reserved.