Design of Silicon On-Wafer Sub-THz Calibration Kit

被引：0
|
作者：
Deng, Marina [1 ]
Fregonese, Sebastien [1 ]
Celi, Didier [2 ]
Chevalier, Pascal [2 ]
De Matos, Magali [1 ]
Zimmer, Thomas [1 ]
机构：
[1] Univ Bordeaux, IMS Lab, 351 Cours Liberat, F-33405 Talence, France
[2] STMicroelectronics, 850 Rue Jean Monnet, F-38926 Crolles, France
来源：
2017 MEDITERRANEAN MICROWAVE SYMPOSIUM (MMS) | 2017年
关键词：
SiGe HBT; BiCMOS; on-wafer; TRL; calibration; G-band;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
On-wafer TRL calibration kits were developed in STMicroelectronics BiCMOS55 technology. Standard straight lines and meander lines topologies were investigated and compared together through a SiGe HBT characterization up to 220 GHz.
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页数：4
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