Development and Characterization of New 256 x 256 Pixel DEPFET Detectors for X-Ray Astronomy

被引：10

作者：

Meuris, Aline ^{[1
]}

Aschauer, Florian ^{[1
]}

De Vita, Giulio ^{[1
]}

Guenther, Bettina ^{[1
]}

Herrmann, Sven ^{[1
]}

Lauf, Thomas ^{[1
]}

Lechner, Peter ^{[2
]}

Lutz, Gerhard ^{[2
]}

Majewski, Petra ^{[2
]}

Miessner, Danilo ^{[1
]}

Porro, Matteo ^{[1
]}

Reiffers, Jonas ^{[1
]}

Stefanescu, Alexander ^{[3
]}

Schopper, Florian ^{[2
]}

Soltau, Heike ^{[2
]}

Strueder, Lothar ^{[1
]}

Treis, Johannes ^{[4
]}

机构：

[1] Max Planck Inst Extraterr Phys, D-85741 Garching, Germany

[2] PNSensor GmbH, D-80805 Munich, Germany

[3] Johannes Gutenberg Univ Mainz, D-55099 Mainz, Germany

[4] Max Planck Inst Sonnensyst Forsch, D-37191 Katlenburg Lindau, Germany

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 03期

关键词：

Active pixel sensors; depleted P-channel field-effect transistor (DEPFET); IXO; silicon radiation detectors; X-ray imaging; X-ray spectroscopy; X-ray telescopes;

D O I：

10.1109/TNS.2011.2126599

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

DEPFET detectors are silicon (Si) active pixel sensors designed and manufactured in the Max-Planck-Institut semiconductor lab. Their high spatial resolution and high energy resolution in X-rays make them attractive for particle tracking in colliders and for X-ray astronomy. This technology is foreseen for the Wide Field Imager of the International X-ray Observatory currently in study with ESA, NASA, and JAXA. New DEPFET matrixes with 256 256 pixels of 75-mu m pitch have been produced, mounted on ceramic boards with dedicated front-end electronics and integrated in a new setup able to acquire large-format images and spectra. Excellent homogeneity has been observed. Energy resolution as low as 127 eV FWHM at 5.9 keV has been obtained including all single events of the matrix back illuminated at -45 degrees C and read out at a 300-frames/s rate. This paper presents experimental methods and results.

引用

页码：1206 / 1211

页数：6

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