Experimental investigation of dimension effect on electrical oscillation in planar device based on VO2 thin film

被引：19

作者：

Seo, Giwan ^{[2
,3
]}

Kim, Bong-Jun ^{[2
]}

Lee, Yong Wook ^{[1
,2
]}

Choi, Sungyoul ^{[2
]}

Shin, Jun-Hwan ^{[2
,3
]}

Kim, Hyun-Tak ^{[2
,3
]}

机构：

[1] Pukyong Natl Univ, Sch Elect Engn, Pusan 608737, South Korea

[2] ETRI, Met Insulator Transit Device Team, Taejon 305700, South Korea

[3] Univ Sci & Technol, Sch Adv Device Technol, Taejon 305350, South Korea

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 10期

关键词：

Metal-insulator transition; VO2 thin film; Electrical oscillation; Planar device; Dimension effect; TRANSITION; MECHANISM;

D O I：

10.1016/j.tsf.2010.12.168

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we report on an experimental analysis of dimension effect on a room-temperature electrical oscillation in a planar device using vanadium dioxide (VO2) thin film. We investigate the variation of the oscillation current (I-O) and frequency (f(O)) due to the variation of the dimension of the VO2 devices, i.e., the length and width of the current channel of the device. For five different VO2 devices with different dimensions, I-o and f(o) are observed at room temperature in a simple circuit composed of a dc voltage source and a standard resistor including one of the VO2 devices. From the experimental investigation, it is concluded that the peak-to-peak amplitude of I-o and f(o) decrease with the increase of the length and width of the current channel. This indicates that f(o) depends on not only the external source voltage but also the device dimension. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：3383 / 3387

页数：5

共 22 条

[1] Control of current-jump induced by voltage, temperature, light in p-type GaAs: Programmable critical temperature sensor [J].