Ultrasensitive photodetectors based on a high-quality LiInSe2 single crystal

被引：9

作者：

Jia, Ning ^{[1
]}

Wang, Shanpeng ^{[1
,2
]}

Wang, Pengfei ^{[3
]}

Li, Chunlong ^{[1
]}

Yu, TongTong ^{[1
]}

Qiao, Jie ^{[1
]}

Li, Chenning ^{[1
]}

Xiong, Xixi ^{[1
]}

Sun, Jia-Lin ^{[3
]}

Tao, Xutang ^{[1
,2
]}

机构：

[1] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

[2] Shandong Univ, Minist Educ, Key Lab Funct Crystal Mat & Device, Jinan 250100, Peoples R China

[3] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2018年 / 6卷 / 46期

基金：

中国国家自然科学基金;

关键词：

HIGH-DETECTIVITY; PHOTOELECTRIC PROPERTIES; HIGH-EFFICIENCY; MID-IR; PEROVSKITE; PERFORMANCE; GROWTH; LAYER; HETEROJUNCTION; GENERATION;

D O I：

10.1039/c8tc04337j

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

As an environmentally friendly and chemically robust crystal, LiInSe2 (LISe) exhibits promising optoelectronic properties. Here, an ultrasensitive metal-semiconductor-metal (MSM) structured photodetector based on a high-quality LISe crystal was systemically investigated. Remarkably, the LISe based photodetectors exhibit an outstanding photosensitivity with a high on/off current ratio (6.80 x 10(4)), fast photoresponse (t(rise) = 180 s and t(decay) = 200 s), and high detectivity (2.16 x 10(12) Jones). This work may lay the foundation and ignite future research interest on chalcogenide crystals in photodetectors.

引用

页码：12615 / 12622

页数：8

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