Ultrasensitive photodetectors based on a high-quality LiInSe2 single crystal

被引：9
|
作者：
Jia, Ning [1 ]
Wang, Shanpeng [1 ,2 ]
Wang, Pengfei [3 ]
Li, Chunlong [1 ]
Yu, TongTong [1 ]
Qiao, Jie [1 ]
Li, Chenning [1 ]
Xiong, Xixi [1 ]
Sun, Jia-Lin [3 ]
Tao, Xutang [1 ,2 ]
机构：
[1] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[2] Shandong Univ, Minist Educ, Key Lab Funct Crystal Mat & Device, Jinan 250100, Peoples R China
[3] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
来源：
JOURNAL OF MATERIALS CHEMISTRY C | 2018年 / 6卷 / 46期
基金：
中国国家自然科学基金;
关键词：
HIGH-DETECTIVITY; PHOTOELECTRIC PROPERTIES; HIGH-EFFICIENCY; MID-IR; PEROVSKITE; PERFORMANCE; GROWTH; LAYER; HETEROJUNCTION; GENERATION;
D O I：
10.1039/c8tc04337j
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
As an environmentally friendly and chemically robust crystal, LiInSe2 (LISe) exhibits promising optoelectronic properties. Here, an ultrasensitive metal-semiconductor-metal (MSM) structured photodetector based on a high-quality LISe crystal was systemically investigated. Remarkably, the LISe based photodetectors exhibit an outstanding photosensitivity with a high on/off current ratio (6.80 x 10(4)), fast photoresponse (t(rise) = 180 s and t(decay) = 200 s), and high detectivity (2.16 x 10(12) Jones). This work may lay the foundation and ignite future research interest on chalcogenide crystals in photodetectors.
引用
收藏
页码：12615 / 12622
页数：8
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