Collateral evidence for an excellent radiative performance of AlxGa1-xN alloy films of high AlN mole fractions

被引：30

作者：

Chichibu, S. F. ^{[1
]}

Hazu, K. ^{[1
]}

Onuma, T. ^{[1
]}

Uedono, A. ^{[2
]}

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Ctr Adv Nitride Technol, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Univ Tsukuba, Inst Appl Phys, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 05期

关键词：

TIME-RESOLVED PHOTOLUMINESCENCE; POSITRON-ANNIHILATION TECHNIQUES; THREADING EDGE DISLOCATION; GALLIUM VACANCIES; GAN; GROWTH; EPILAYERS; NITRIDE; QUALITY; DEFECTS;

D O I：

10.1063/1.3615681

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recombination dynamics for the deep-ultraviolet (DUV) near-band-edge emission of AlxGa1-xN epilayers of high AlN mole fractions (x) are studied using time-resolved spectroscopy. Their low-temperature radiative lifetime (tau(R)) is longer than that for the epilayers of low-x AlxGa1-xN, AlN, or GaN due to the contribution of bound and localized tail-states. However, tau(R) shows little change with temperature rise, and the value is a few ns at 300 K. The results essentially indicate an excellent radiative performance of AlxGa1-xN alloys of high x, although the luminescence efficiency of AlxGa1-xN DUV light-emitting-diodes reported so far is limited by the short nonradiative lifetime. (C) 2011 American Institute of Physics. [doi:10.1063/1.3615681]

引用

页数：3

共 29 条

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