Collateral evidence for an excellent radiative performance of AlxGa1-xN alloy films of high AlN mole fractions

被引：31
作者：
Chichibu, S. F. [1 ]
Hazu, K. [1 ]
Onuma, T. [1 ]
Uedono, A. [2 ]
机构：
[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Ctr Adv Nitride Technol, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Univ Tsukuba, Inst Appl Phys, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan
来源：
APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 05期
关键词：
TIME-RESOLVED PHOTOLUMINESCENCE; POSITRON-ANNIHILATION TECHNIQUES; THREADING EDGE DISLOCATION; GALLIUM VACANCIES; GAN; GROWTH; EPILAYERS; NITRIDE; QUALITY; DEFECTS;
D O I：
10.1063/1.3615681
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Recombination dynamics for the deep-ultraviolet (DUV) near-band-edge emission of AlxGa1-xN epilayers of high AlN mole fractions (x) are studied using time-resolved spectroscopy. Their low-temperature radiative lifetime (tau(R)) is longer than that for the epilayers of low-x AlxGa1-xN, AlN, or GaN due to the contribution of bound and localized tail-states. However, tau(R) shows little change with temperature rise, and the value is a few ns at 300 K. The results essentially indicate an excellent radiative performance of AlxGa1-xN alloys of high x, although the luminescence efficiency of AlxGa1-xN DUV light-emitting-diodes reported so far is limited by the short nonradiative lifetime. (C) 2011 American Institute of Physics. [doi:10.1063/1.3615681]
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页数：3
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