Dual Junction GaInP/GaAs Solar Cell with Enhanced Efficiency Using Type-A InP Quantum Wells

被引：6
作者：
Verma, Manish [1 ]
Mishra, Guru Prasad [1 ]
机构：
[1] Natl Inst Technol Raipur, Dept Elect & Commun Engn, GE Rd, Raipur 492010, Chhatisgarh, India
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2022年 / 219卷 / 05期
关键词：
dual junction; GaInP; GaAs solar cell; InP quantum wells; photon absorption; quantum wells; type-A band structure; BACK SURFACE FIELD; OPTIMIZATION; DESIGN;
D O I：
10.1002/pssa.202100448
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Multijunction solar cells (SCs) have excellent potential to achieve higher efficiency for increased sun concentration. The two-step photon absorption in the quantum wells (QWs) can further enhance the performance of the solar cell. A GaInP/GaAs dual junction solar cell is proposed with InP QWs. The type-A InP QWs are inserted in the intrinsic region of the top cell because in the top cell, short-circuit current governs the overall cell current. The voltage preservation is applied by careful structuring of the p-i-n region at the top cell. The sub-band photon absorption enhances the external and internal quantum efficiency (QE) of the top cell, and both cells have above 90% QEs. The peak efficiencies of 44.09% under 1 sun and 48.18% under 1000 sun concentrations are achieved, and the performance is compared with the available experimental and simulated data.
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页数：9
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