Front drive display structure for color electronic paper using fully transparent amorphous oxide TFT array

被引：50
作者：
Ito, Manabu
Kon, Masato
Miyazaki, Chihiro
Ikeda, Noriaki
Ishizaki, Mamoru
Ugajin, Yoshiko
Sekine, Norimasa
机构：
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2007年 / E90C卷 / 11期
关键词：
transparent amorphous oxide semiconductor; a-InGaZnO; E ink display; color filter array; thin film transistor; front drive structure;
D O I：
10.1093/ietele/e90-c.11.2105
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate a novel display structure for color electronic paper for the first time. Fully transparent amorphous oxide TFT array is directly deposited onto color filter array and combined with E Ink Imaging Film. Taking advantage of the transparent property of the oxide TFT, the color filter and TFT array are positioned at the viewing side of the display. This novel "Front Drive" display structure facilitates the alignment of the color filter and TFT dramatically.
引用
收藏
页码：2105 / 2111
页数：7
相关论文
共 53 条
[1]  
AU J, 2002, P IDW 02, P223
[2]   Ultraviolet detecting properties of ZnO-based thin film transistors [J].
Bae, HS ;
Im, S .
THIN SOLID FILMS, 2004, 469 :75-79
[3]   Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide [J].
Barquinha, P. ;
Pimentel, A. ;
Marques, A. ;
Pereira, L. ;
Martins, R. ;
Fortunato, E. .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :1749-1752
[4]  
Bouchard A., 2006, SID 06, P1934, DOI 10.1889/1.2433429
[5]   Fabrication of organic light-emitting diode arrays on flexible plastic substrates by imprint lithography [J].
Cheng, Chiao-Yang ;
Hong, Franklin Chau-Nan .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (11) :8915-8919
[6]   An electrophoretic ink for all-printed reflective electronic displays [J].
Comiskey, B ;
Albert, JD ;
Yoshizawa, H ;
Jacobson, J .
NATURE, 1998, 394 (6690) :253-255
[7]  
Crawford GP, 2005, WILEY-SID SER DISPL, P1, DOI 10.1002/0470870508
[8]   Transparent thin-film transistors with zinc indium oxide channel layer [J].
Dehuff, NL ;
Kettenring, ES ;
Hong, D ;
Chiang, HQ ;
Wager, JF ;
Hoffman, RL ;
Park, CH ;
Keszler, DA .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)
[9]   Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature [J].
Fortunato, EMC ;
Barquinha, PMC ;
Pimentel, ACMBG ;
Gonçalves, AMF ;
Marques, AJS ;
Martins, RFP ;
Pereira, LMN .
APPLIED PHYSICS LETTERS, 2004, 85 (13) :2541-2543
[10]   Flexible active-matrix displays and shift registers based on solution-processed organic transistors [J].
Gelinck, GH ;
Huitema, HEA ;
Van Veenendaal, E ;
Cantatore, E ;
Schrijnemakers, L ;
Van der Putten, JBPH ;
Geuns, TCT ;
Beenhakkers, M ;
Giesbers, JB ;
Huisman, BH ;
Meijer, EJ ;
Benito, EM ;
Touwslager, FJ ;
Marsman, AW ;
Van Rens, BJE ;
De Leeuw, DM .
NATURE MATERIALS, 2004, 3 (02) :106-110
123456