Adjustable voltage dependent switching characteristics of PRAM for low voltage programming of multi-level resistances

被引：0

作者：

Kim, Gwihyun ^{[1
]}

Lee, Sanghyun ^{[1
]}

Hong, Seungwoo ^{[1
]}

Baik, Seung Jae ^{[1
]}

Hori, Hideki ^{[2
]}

Ahn, Dong-ho ^{[2
]}

机构：

[1] Hankyong Natl Univ, Dept Elect Elect & Control Engn, Anseong, Gyeonggi Do, South Korea

[2] Samsung Elect Co, Semicond R&D Ctr, Hwaseong Si, Gyeonggi Do, South Korea

来源：

2014 14TH ANNUAL NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM (NVMTS) | 2014年

关键词：

MLC PRAM; programming pulse; reset initialization; microstructual model; PHASE-CHANGE MEMORY;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Low voltage programming of multi-level-cell phase change random access memory (MLC PRAM) is important for future low power high density applications of PRAM devices [1]. We have characterized voltage dependent resistance switching characteristics of PRAM devices with various voltage pulses, based on which a dual-pulse programming method is systematically proposed to demonstrate some principles of low voltage MLC programming. A microstructural model is also introduced to provide a comprehensive explanation of resistance swiching for various voltage pulses.

引用

页数：3

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