Two-Dimensional Inverters Based on MoS2-hBN-Graphene Heterostructures Enabled by a Layer-by-Layer Dry-Transfer Method

被引：6

作者：

Liang, Yachun ^{[1
]}

Zhu, Jiankai ^{[1
]}

Xiao, Fei ^{[1
]}

Xu, Bo ^{[1
]}

Wen, Ting ^{[1
]}

Wu, Song ^{[1
]}

Li, Jing ^{[1
]}

Xia, Juan ^{[1
]}

Wang, Zenghui ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Peoples R China

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2021年 / 9卷

基金：

中国国家自然科学基金;

关键词：

2D materials; nanodevice; 2D semiconductor; device fabrication; FIELD-EFFECT TRANSISTORS; INTEGRATED-CIRCUITS; MOS2; TRANSISTORS; TRANSPARENT;

D O I：

10.1109/JEDS.2021.3097995

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two-dimensional (2D) layered materials offer unique opportunities for building novel nanoscale electronics devices. As the family of 2D materials and their heterostructure continue to grow, it is desirable to have a technique capable of quickly prototyping 2D devices for efficient exploration of new materials and devices. Here, we demonstrate a facile all-dry transfer technique that can very efficiently build 2D devices, and show that a digital inverter can be realized using such technique. Our results can be leveraged for building and testing new types of 2D nanodevices with high throughput.

引用

页码：1269 / 1274

页数：6

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