FABRICATION AND CHARACTERIZATION OF GRAPHENE-BASED QUANTUM HALL EFFECT DEVICES AT INRIM

被引：0
|
作者：
Bruna, M. [1 ]
Cassiago, C. [1 ]
Callegaro, L. [1 ]
Gasparotto, E. [1 ]
Rocci, R. [1 ]
Borini, S. [1 ]
机构：
[1] INRIM, Electromagnet Div, I-10135 Turin, Italy
来源：
2010 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS CPEM | 2010年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the research activity in progress at INRIM about graphene-based devices. This study, aimed at the realization of new quantum resistance standards, involves both the fabrication and the measurement of the devices. The various technological steps needed to obtain a characterized quantum Hall effect device on graphene will be illustrated.
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收藏
页码：349 / 350
页数：2
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