Effect of Sb Doping on the Thermoelectric Properties of Mg2Si0.7Sn0.3 Solid Solutions

被引：38

作者：

Gao, H. L. ^{[1
]}

Liu, X. X. ^{[1
]}

Zhu, T. J. ^{[1
]}

Yang, S. H. ^{[1
]}

Zhao, X. B. ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2011年 / 40卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Thermoelectric material; Sb doping; fabrication method; solid solution; SI; GE; MG2SI1-XSNX; SYSTEM;

D O I：

10.1007/s11664-011-1584-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study focuses on Sb-doped Mg-2(Si,Sn) thermoelectric material. Samples were successfully fabricated using a hybrid synthesis method consisting of three different processes: induction melting, solid-state reaction, and a hot-press sintering technique. We found that the carrier concentration increased with Sb content, while the Seebeck coefficient exhibited a decreasing trend. Sb doping was shown to improve the power factor and thermoelectric figure of merit compared with the undoped material, yielding a peak figure of merit (ZT) of similar to 0.55 at 620 K, while leaving the band gap of Mg2Si0.7Sn0.3 almost unchanged.

引用

页码：830 / 834

页数：5

共 50 条

[41] Solid-State Synthesis and Thermoelectric Properties of Mg2Si1−xSnx [J].

Sin-Wook You ;

Il-Ho Kim ;

Soon-Mok Choi ;

Won-Seon Seo ;

Sun-Uk Kim .

Journal of Electronic Materials, 2013, 42 :1490-1494

[42] Preparation and Thermoelectric Properties of (Mg2Si1-xSbx)0.4-(Mg2Sn)0.6 Alloys [J].

Han Zhi-Ming ;

Zhang Xin ;

Lu Qing-Mei ;

Zhang Jiu-Xing ;

Zhang Fei-Peng .

JOURNAL OF INORGANIC MATERIALS, 2012, 27 (08) :822-826

[43] High Thermoelectric Properties in Mg2Ge0.25Sn0.75−xSbx Solid Solution [J].

Weiqin Ao ;

Miao Peng ;

Fusheng Liu ;

Junqin Li ;

Yong Du ;

Shuhong Liu ;

Chengying Shi .

Journal of Electronic Materials, 2019, 48 :5959-5966

[44] High Thermoelectric Properties in Mg2Ge0.25Sn0.75-xSbx Solid Solution [J].

Ao, Weiqin ;

Peng, Miao ;

Liu, Fusheng ;

Li, Junqin ;

Du, Yong ;

Liu, Shuhong ;

Shi, Chengying .

JOURNAL OF ELECTRONIC MATERIALS, 2019, 48 (09) :5959-5966

[45] Synthesis of Mg2Si1-xSnx solid solutions as thermoelectric materials by bulk mechanical alloying and hot pressing [J].

Song, R. B. ;

Aizawa, T. ;

Sun, J. Q. .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2007, 136 (2-3) :111-117

[46] Thermoelectric Properties of Sb-Doped Mg2Si Prepared Using Different Silicon Sources [J].

Yukihiro Isoda ;

Satoki Tada ;

Hiroyuki Kitagawa ;

Yoshikazu Shinohara .

Journal of Electronic Materials, 2016, 45 :1772-1778

[47] Research Progress on the Mg2（Si,Sn） Based Thermoelectric Materials [J].

李鑫 ;

谢辉 ;

杨宾 ;

李双明 .

材料导报, 2020, (S1) :43-47

[48] Thermoelectric Properties of Mg2Si0.995Sb0.005 Prepared by the High-Pressure High-Temperature Method [J].

Jialiang Li ;

Gang Chen ;

Bo Duan ;

Yaju Zhu ;

Xiaojun Hu ;

Pengcheng Zhai ;

Peng Li .

Journal of Electronic Materials, 2017, 46 :2570-2575

[49] Low-temperature solid state reaction synthesis and thermoelectric properties of high-performance and low-cost Sb-doped Mg2Si0.6Sn0.4 [J].

Liu, Wei ;

Tang, Xinfeng ;

Sharp, Jeff .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (08)

[50] Enhancement of thermoelectric properties of Mg2Si compounds with Bi doping through carrier concentration tuning [J].

Ji Eun Lee ;

Sang-Hum Cho ;

Min-Wook Oh ;

Byungi Ryu ;

Sung-Jae Joo ;

Bong-Seo Kim ;

Bok-Ki Min ;

Hee-Woong Lee ;

Su-Dong Park .

Electronic Materials Letters, 2014, 10 :807-811

← 1 2 3 4 5 →