Effect of Sb Doping on the Thermoelectric Properties of Mg2Si0.7Sn0.3 Solid Solutions

被引：38

作者：

Gao, H. L. ^{[1
]}

Liu, X. X. ^{[1
]}

Zhu, T. J. ^{[1
]}

Yang, S. H. ^{[1
]}

Zhao, X. B. ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2011年 / 40卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Thermoelectric material; Sb doping; fabrication method; solid solution; SI; GE; MG2SI1-XSNX; SYSTEM;

D O I：

10.1007/s11664-011-1584-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study focuses on Sb-doped Mg-2(Si,Sn) thermoelectric material. Samples were successfully fabricated using a hybrid synthesis method consisting of three different processes: induction melting, solid-state reaction, and a hot-press sintering technique. We found that the carrier concentration increased with Sb content, while the Seebeck coefficient exhibited a decreasing trend. Sb doping was shown to improve the power factor and thermoelectric figure of merit compared with the undoped material, yielding a peak figure of merit (ZT) of similar to 0.55 at 620 K, while leaving the band gap of Mg2Si0.7Sn0.3 almost unchanged.

引用

页码：830 / 834

页数：5

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