The carrier tunneling in ZnCdSe/ZnSe asymmetric double-quantum-well structure

被引：0
作者：
Yu, GY [1 ]
Fan, XW [1 ]
Zhang, JY [1 ]
Yang, BJ [1 ]
Zhao, XW [1 ]
Shen, DZ [1 ]
Kong, XG [1 ]
机构：
[1] Chinese Acad Sci, Changchun Inst Phys, Changchun 130021, Peoples R China
来源：
ELECTRO-OPTIC AND SECOND HARMONIC GENERATION MATERIALS, DEVICES, AND APPLICATIONS II | 1998年 / 3556卷
关键词：
ZnCdSe/ZnSe; ADQW; tunneling;
D O I：
10.1117/12.318247
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Optical characteristics of ZnCdSe/ZnSe asymmetric double-quantum-well structure grown by LP-MOCVD were studied. By analyzing the photoluminescence spectra, we found that the excitation power and temperature could influence the tunneling of the excitons, and due to different tunneling time of electrons and holes, space-charge effect was observed.
引用
收藏
页码：166 / 169
页数：4
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