Another route to ferroelectric HfO2

被引:5
作者
Eastman, Jeffrey A. [1 ]
机构
[1] Argonne Natl Lab, Mat Sci Div, Lemont, IL 60439 USA
关键词
D O I
10.1038/s41563-022-01297-z
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Observation of large remnant polarization in epitaxial yttrium-doped hafnium oxide thin films demonstrates that small-grained or ultrathin microstructures are not required to achieve robust ferroelectric behaviour.
引用
收藏
页码:845 / 847
页数:3
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