Growth of multilayers of Bi2Se3/ZnSe: Heteroepitaxial interface formation and strain

被引：35

作者：

Li, H. D. ^{[1
,2
]}

Wang, Z. Y. ^{[1
]}

Guo, X. ^{[1
]}

Wong, Tai Lun ^{[3
]}

Wang, Ning ^{[3
]}

Xie, M. H. ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[2] Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R China

[3] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 04期

关键词：

TOPOLOGICAL INSULATOR BI2SE3; SINGLE DIRAC CONE; GASE; NANORIBBONS; SURFACE; ZNSE;

D O I：

10.1063/1.3548865

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Multilayers of Bi2Se3/ZnSe with the periodicity of a few nanometers were grown by molecular-beam epitaxy on Si(111). While epitaxial growth of Bi2Se3 on ZnSe proceeded by two-dimensional nucleation, ZnSe growth on Bi2Se3 showed the three-dimensional growth front. Therefore, the two complementary interfaces of Bi2Se3/ZnSe were asymmetric in morphological properties. Strain-relaxation rates were found to differ between epitaxial ZnSe and Bi2Se3, which could be attributed to the specific growth modes and the properties of Bi2Se3 and ZnSe surfaces. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3548865]

引用

页数：3

共 15 条

[1] X-ray multiple diffraction (Umweganregung) in wurtzite-type GaN and ZnO epitaxial layers [J].

Bläsing, J ;

Krost, A .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (04) :R17-R20

[2] New directions for low-dimensional thermoelectric materials [J].

Dresselhaus, Mildred S. ;

Chen, Gang ;

Tang, Ming Y. ;

Yang, Ronggui ;

Lee, Hohyun ;

Wang, Dezhi ;

Ren, Zhifeng ;

Fleurial, Jean-Pierre ;

Gogna, Pawan .

ADVANCED MATERIALS, 2007, 19 (08) :1043-1053

[3] Ultrathin Topological Insulator Bi2Se3 Nanoribbons Exfoliated by Atomic Force Microscopy [J].

Hong, Seung Sae ;

Kundhikanjana, Worasom ;

Cha, Judy J. ;

Lai, Keji ;

Kong, Desheng ;

Meister, Stefan ;

Kelly, Michael A. ;

Shen, Zhi-Xun ;

Cui, Yi .

NANO LETTERS, 2010, 10 (08) :3118-3122

[4] Surface modification for epitaxial growth of single crystalline cobalt thin films with uniaxial magnetic anisotropy on GaN(0001)-1 x 1 surfaces [J].

Li, H. D. ;

He, K. ;

Xie, M. H. ;

Wang, N. ;

Jia, J. F. ;

Xue, Q. K. .

NEW JOURNAL OF PHYSICS, 2010, 12

[5]

MARUGIN VV, 1983, ZH NEORG KHIM+, V28, P2104

[6]

PALMER JE, 1995, J CRYST GROWTH, V150, P685, DOI 10.1016/0022-0248(94)00758-6

[7]

Peng HL, 2010, NAT MATER, V9, P225, DOI [10.1038/nmat2609, 10.1038/NMAT2609]

[8] Quantum-dot nucleation in strained-layer epitaxy: Minimum-energy pathway in the stress-driven two-dimensional to three-dimensional transformation [J].

Prieto, JE ;

Markov, I .

PHYSICAL REVIEW B, 2005, 72 (20)

[9] Interfacial Dirac Cones from Alternating Topological Invariant Superlattice Structures of Bi2Se3 [J].

Song, Jung-Hwan ;

Jin, Hosub ;

Freeman, Arthur J. .

PHYSICAL REVIEW LETTERS, 2010, 105 (09)

[10] Thin-film thermoelectric devices with high room-temperature figures of merit [J].

Venkatasubramanian, R ;

Siivola, E ;

Colpitts, T ;

O'Quinn, B .

NATURE, 2001, 413 (6856) :597-602

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