Full-hemisphere valence band photoemission spectra calculated for the ideal Si(001) surface

被引：6

作者：

Solterbeck, CH

Schattke, W

Fadley, CS

机构：

[1] CHRISTIAN ALBRECHTS UNIV KIEL, INST THEORET PHYS, D-24118 KIEL, GERMANY

[2] UNIV CALIF DAVIS, BERKELEY, CA USA

[3] LAWRENCE BERKELEY LAB, BERKELEY, CA USA

来源：

SURFACE SCIENCE | 1996年 / 357卷 / 1-3期

关键词：

Angle resolved photoemission; electron density; excitation spectra calculations; photoelectron emission; semiconducting surfaces; silicon; single crystal surfaces;

D O I：

10.1016/0039-6028(96)00101-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Angle resolved photoemission spectra from the Si(001) surface have been calculated within the highly accurate one-step model. These spin integrated constant final state spectra for the valence bands have been investigated as a function of the emission direction of electrons. Especially, differences between right and left circularly polarized light in the spectra have been considered. A strong circular dichroism is found depending on the orbital composition of the contributing initial states. From various photoelectron patterns over the full 2 pi hemisphere an example for a p orbital dominated binding energy is presented and discussed.

引用

页码：245 / 250

页数：6

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