Role of strain in polarization switching in semipolar InGaN/GaN quantum wells

被引：33

作者：

Yan, Qimin ^{[1
]}

Rinke, Patrick ^{[1
,2
]}

Scheffler, Matthias ^{[1
,2
]}

Van de Walle, Chris G. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 18期

关键词：

GAN;

D O I：

10.1063/1.3507289

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of strain on the valence-band structure of (11 (2) over bar2) semipolar InGaN grown on GaN substrates is studied. A k . p analysis reveals that anisotropic strain in the c-plane and shear strain are crucial for deciding the ordering of the two topmost valence bands. The shear-strain deformation potential D-6 is calculated for GaN and InN using density functional theory with the Heyd-Scuseria-Ernzerhof hybrid functional [J. Heyd, G. E. Scuseria, and M. Ernzerhof, J. Chem. Phys. 124, 219906 (2006)]. Using our deformation potentials and assuming a pseudomorphically strained structure, no polarization switching is observed. We investigate the role of partial strain relaxation in the observed polarization switching. (C) 2010 American Institute of Physics. [doi:10.1063/1.3507289]

引用

页数：3

共 24 条

[11] The roles of structural imperfections in InGaN-Based blue light-emitting diodes and laser diodes [J].

Nakamura, S .

SCIENCE, 1998, 281 (5379) :956-961

[12] Efficient radiative recombination from ⟨11(2)over-bar-2⟩-oriented InxGa1-xN multiple quantum wells fabricated by the regrowth technique [J].

Nishizuka, K ;

Funato, M ;

Kawakami, Y ;

Fujita, S ;

Narukawa, Y ;

Mukai, T .

APPLIED PHYSICS LETTERS, 2004, 85 (15) :3122-3124

[13] Prospects for LED lighting [J].

Pimputkar, Siddha ;

Speck, James S. ;

DenBaars, Steven P. ;

Nakamura, Shuji .

NATURE PHOTONICS, 2009, 3 (04) :179-181

[14] Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN [J].

Rinke, Patrick ;

Winkelnkemper, M. ;

Qteish, A. ;

Bimberg, D. ;

Neugebauer, J. ;

Scheffler, M. .

PHYSICAL REVIEW B, 2008, 77 (07)

[15] Strain-induced polarization in wurtzite III-nitride semipolar layers [J].

Romanov, A. E. ;

Baker, T. J. ;

Nakamura, S. ;

Speck, J. S. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (02)

[16] 500-nm Optical Gain Anisotropy of Semipolar (11(2)over-bar2) InGaN Quantum Wells [J].

Sizov, Dmitry S. ;

Bhat, Rajaram ;

Napierala, Jerome ;

Gallinat, Chad ;

Song, Kechang ;

Zah, Chung-en .

APPLIED PHYSICS EXPRESS, 2009, 2 (07)

[17] Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (11(2)over-bar2) GaN free standing substrates [J].

Tyagi, Anurag ;

Wu, Feng ;

Young, Erin C. ;

Chakraborty, Arpan ;

Ohta, Hiroaki ;

Bhat, Rajaram ;

Fujito, Kenji ;

DenBaars, Steven P. ;

Nakamura, Shuji ;

Speck, James S. .

APPLIED PHYSICS LETTERS, 2009, 95 (25)

[18] Stimulated emission at blue-green (480 nm) and green (514 nm) wavelengths from nonpolar (m-plane) and semipolar (11(2)over-bar2) InGaN multiple quantum well laser diode structures [J].

Tyagi, Anurag ;

Lin, You-Da ;

Cohen, Daniel A. ;

Saito, Makoto ;

Fujito, Kenji ;

Speck, James S. ;

DenBaars, Steven P. ;

Nakamura, Shuji .

APPLIED PHYSICS EXPRESS, 2008, 1 (09) :0911031-0911033

[19] Epitaxial growth and optical properties of semipolar (11(2)over-bar2) GaN and InGaN/GaN quantum wells on GaN bulk substrates [J].

Ueda, M. ;

Kojima, K. ;

Funato, M. ;

Kawakami, Y. ;

Narukawa, Y. ;

Mukai, T. .

APPLIED PHYSICS LETTERS, 2006, 89 (21)

[20] Polarization switching phenomena in semipolar InxGa1-xN/GaN quantum well active layers [J].

Ueda, M. ;

Funato, M. ;

Kojima, K. ;

Kawakami, Y. ;

Narukawa, Y. ;

Mukai, T. .

PHYSICAL REVIEW B, 2008, 78 (23)

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