Role of strain in polarization switching in semipolar InGaN/GaN quantum wells

被引：33

作者：

Yan, Qimin ^{[1
]}

Rinke, Patrick ^{[1
,2
]}

Scheffler, Matthias ^{[1
,2
]}

Van de Walle, Chris G. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 18期

关键词：

GAN;

D O I：

10.1063/1.3507289

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of strain on the valence-band structure of (11 (2) over bar2) semipolar InGaN grown on GaN substrates is studied. A k . p analysis reveals that anisotropic strain in the c-plane and shear strain are crucial for deciding the ordering of the two topmost valence bands. The shear-strain deformation potential D-6 is calculated for GaN and InN using density functional theory with the Heyd-Scuseria-Ernzerhof hybrid functional [J. Heyd, G. E. Scuseria, and M. Ernzerhof, J. Chem. Phys. 124, 219906 (2006)]. Using our deformation potentials and assuming a pseudomorphically strained structure, no polarization switching is observed. We investigate the role of partial strain relaxation in the observed polarization switching. (C) 2010 American Institute of Physics. [doi:10.1063/1.3507289]

引用

页数：3

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