Quantum well states and sizable Rashba splitting on Pb induced α-phase Bi/Si(111) surface reconstruction

被引:6
|
作者
Chi, Longxing [1 ]
Singh, Chandra Veer [1 ,2 ]
Nogami, Jun [1 ]
机构
[1] Univ Toronto, Dept Mat Sci & Engn, 184 Coll St, Toronto, ON M5S 3E4, Canada
[2] Univ Toronto, Dept Mech & Ind Engn, 5 Kings Coll Rd, Toronto, ON M5S 3G8, Canada
基金
加拿大创新基金会; 加拿大自然科学与工程研究理事会;
关键词
SI(111); SUPERCONDUCTIVITY;
D O I
10.1039/d1nr04588a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Quantum well states (QWSs) with sizable Rashba splitting are a promising quantum phase to achieve spin-split current for quantum computing and spintronics due to their controllable band structures. However, most QWSs were achieved upon metallic substrates with strong bulk electron transport. Developing semiconductor-based QWSs is preferable to minimize substrate interference. Here we report a Pb induced surface reconstruction on Bi/Si(111) alpha phase. Combining scanning tunneling microscopy (STM) and density functional theory (DFT) the atomic structure has been determined. QWSs and a sizable Rashba band splitting are predicted, with the latter comparable to what is found in other semiconductor heterostructures and an order of magnitude higher than that in Pb/Si(111) QWSs.
引用
收藏
页码:16622 / 16628
页数:7
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