Interfacial-engineering enhanced performance and stability of ZnO nanowire-based perovskite solar cells

被引：28

作者：

Sun, Junlu ^{[1
,2
]}

Li, Nengxu ^{[3
]}

Dong, Lin ^{[1
]}

Niu, Xiuxiu ^{[3
]}

Zhao, Mengqi ^{[2
]}

Xu, Ziqi ^{[3
]}

Zhou, Huanping ^{[3
]}

Shan, Chongxin ^{[1
]}

Pan, Caofeng ^{[2
,4
]}

机构：

[1] Zhengzhou Univ, Sch Phys & Microelect, Henan Key Lab Diamond Optoelect Mat & Devices, Zhengzhou 450001, Peoples R China

[2] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing Key Lab Micronano Energy & Sensor, CAS Ctr Excellence Nanosci, Beijing 100083, Peoples R China

[3] Peking Univ, Dept Mat Sci & Engn, Beijing 100871, Peoples R China

[4] Univ Chinese Acad Sci, Sch Nanosci & Technol, Beijing 100049, Peoples R China

来源：

NANOTECHNOLOGY | 2021年 / 32卷 / 47期

基金：

中国国家自然科学基金;

关键词：

perovskite solar cell; gradient energy band; interfacial passivation; stability; LIGHT-EMITTING-DIODES; HIGHLY EFFICIENT; PASSIVATION; TRANSPORT;

D O I：

10.1088/1361-6528/abdbeb

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Perovskite solar cells (PSCs) have attracted extensive attention due to their convenient fabrication and excellent photoelectric characteristics. The highest power conversion efficiency (PCE) of over 25% has been realized. However, ZnO as electron transport layer based PSCs exhibit inferior PCE and stability because of the mismatched energy-band and undesirable interfacial recombination. Here, we introduce a thin layer of SnO2 nanocrystals to construct an interfacial engineering with gradient energy band and interfacial passivation via a facile wet chemical process at a low temperature. The best PCE obtained in this study reaches 18.36%, and the stability is substantially improved and maintains a PCE of almost 100% over 500 h. The low-temperature fabrication process facilitates the future application of ZnO/SnO2-based PSCs in flexible and stretchable electronics.

引用

页数：6

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