Nanometric cutting mechanism of silicon carbide

被引：17

作者：

Wang, Jinshi ^{[1
]}

Fang, Fengzhou ^{[1
]}

机构：

[1] Tianjin Univ, State Key Lab Precis Measuring Technol & Instrume, Lab Micro Nano Mfg Technol MNMT, Tianjin 300072, Peoples R China

来源：

CIRP ANNALS-MANUFACTURING TECHNOLOGY | 2021年 / 70卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Cutting; Silicon carbide; Mechanism; QUANTITATIVE ASSESSMENT; DIAMOND; TOOL;

D O I：

10.1016/j.cirp.2021.04.068

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ductile to brittle transition is critical to achieve nanometric surfaces in the ultraprecision diamond cutting of silicon carbide. Although atomic simulations have long been used to better understand this mechanism, the extremely small model scale limits its capability in matching the actual cutting process. To overcome this serious issue, an enhanced molecular dynamics method is proposed in this study, which successfully predicts and clarifies the onset of brittle regime machining, and indicates the essential roles of dislocation and the shear band. The experimental results validate the effectiveness of this modelling approach. (c) 2021 CIRP. Published by Elsevier Ltd. All rights reserved.

引用

页码：29 / 32

页数：4

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