Nanometric cutting mechanism of silicon carbide

被引:17
|
作者
Wang, Jinshi [1 ]
Fang, Fengzhou [1 ]
机构
[1] Tianjin Univ, State Key Lab Precis Measuring Technol & Instrume, Lab Micro Nano Mfg Technol MNMT, Tianjin 300072, Peoples R China
基金
中国国家自然科学基金;
关键词
Cutting; Silicon carbide; Mechanism; QUANTITATIVE ASSESSMENT; DIAMOND; TOOL;
D O I
10.1016/j.cirp.2021.04.068
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ductile to brittle transition is critical to achieve nanometric surfaces in the ultraprecision diamond cutting of silicon carbide. Although atomic simulations have long been used to better understand this mechanism, the extremely small model scale limits its capability in matching the actual cutting process. To overcome this serious issue, an enhanced molecular dynamics method is proposed in this study, which successfully predicts and clarifies the onset of brittle regime machining, and indicates the essential roles of dislocation and the shear band. The experimental results validate the effectiveness of this modelling approach. (c) 2021 CIRP. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:29 / 32
页数:4
相关论文
共 50 条
  • [1] Shear instability of nanocrystalline silicon carbide during nanometric cutting
    Goel, Saurav
    Luo, Xichun
    Reuben, Robert L.
    APPLIED PHYSICS LETTERS, 2012, 100 (23)
  • [2] MD simulation of stress-assisted nanometric cutting mechanism of 3C silicon carbide
    Liu, Lei
    Xu, Zongwei
    Tian, Dongyu
    Hartmaier, Alexander
    Luo, Xichun
    Zhang, Junjie
    Nordlund, Kai
    Fang, Fengzhou
    INDUSTRIAL LUBRICATION AND TRIBOLOGY, 2019, 71 (05) : 686 - 691
  • [3] Atomistic aspects of ductile responses of cubic silicon carbide during nanometric cutting
    Goel S.
    Luo X.
    Reuben R.L.
    Rashid W.B.
    Nanoscale Research Letters, 6 (1): : 1 - 9
  • [4] Numerical Computation and Analysis of Cutting Forces during Nanometric Scratching of Silicon Carbide
    Barkachary B.M.
    Joshi S.N.
    Journal of The Institution of Engineers (India): Series C, 2022, 103 (01) : 53 - 62
  • [5] Mechanism of Unstable Material Removal Modes in Micro Cutting of Silicon Carbide
    Zhao, Wei
    Hong, Haibo
    Wang, Hongzhi
    MICROMACHINES, 2019, 10 (10)
  • [6] Anisotropy of Single-Crystal Silicon in Nanometric Cutting
    Wang, Zhiguo
    Chen, Jiaxuan
    Wang, Guilian
    Bai, Qingshun
    Liang, Yingchun
    NANOSCALE RESEARCH LETTERS, 2017, 12
  • [7] A quantitative assessment of nanometric machinability of major polytypes of single crystal silicon carbide
    Luo, Xichun
    Goel, Saurav
    Reuben, Robert L.
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2012, 32 (12) : 3423 - 3434
  • [8] Nanometric ductile cutting characteristics of silicon wafer using single crystal diamond tools
    Liu, Kui
    Zuo, Dunwen
    Li, X. P.
    Rahman, M.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (03): : 1361 - 1366
  • [9] Nanometric cutting of single crystal silicon surfaces modified by ion implantation
    Fang, F. Z.
    Chen, Y. H.
    Zhang, X. D.
    Hu, X. T.
    Zhang, G. X.
    CIRP ANNALS-MANUFACTURING TECHNOLOGY, 2011, 60 (01) : 527 - 530
  • [10] Molecular dynamics study on various nanometric cutting boundary conditions
    Zhang, Z. G.
    Fang, F. Z.
    Hu, X. T.
    Sun, C. K.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (03): : 1355 - 1360