Analysis of active pixel sensor readout circuit

被引：19
|
作者：
Salama, K [1 ]
El Gamal, A [1 ]
机构：
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2003年 / 50卷 / 07期
关键词：
active pixel sensor (APS); CMOS image sensor; high-speed imaging; readout electronics;
D O I：
10.1109/TCSI.2003.813977
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This brief provides a detailed analysis of active pixel sensor, pixel and column circuit. Surprisingly, we rind that shorter readout times can be achieved by reducing the bias current and hence reducing energy consumption. We investigate the effect of nonidealities on the readout operation. We find that when the follower transistor channel-length modulation is taken into consideration, delay is reduced, which implies that shorter length transistors can be used in the pixel. We show that readout time decreases linearly with technology scaling.
引用
收藏
页码：941 / 944
页数：4
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