Non-isothermal quasi-bidimensional energy balance model

被引：0
|
作者：
Lepaul, S [1 ]
Aniel, F [1 ]
Peymayeche, L [1 ]
DeLustrac, A [1 ]
Bouillault, F [1 ]
Adde, R [1 ]
机构：
[1] UNIV PARIS 11,IEF,URA 22 CNRS,F-91405 ORSAY,FRANCE
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 07期
关键词：
finite element analysis; high electron mobility transistors;
D O I：
10.1049/el:19960418
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The self heating effect in ultrashort gale length high electron mobility transistors (HEMTs) is investigated. An original model is presented which accounts for both bidimensional heat transfer and quasi bidimensional energy balance carrier transport.
引用
收藏
页码：692 / 694
页数：3
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