Secondary Electron Potential Contrast for Dopant Profiling of Silicon Carbide Devices

被引：0
|
作者：
Buzzo, Marco [1 ]
Ciappa, Mauro [2 ]
Fichtner, Wolfgang [2 ]
机构：
[1] Infineon Technol, A-9500 Villach, Austria
[2] ETH Swiss Fed Inst Technol, CH-8092 Zurich, Switzerland
来源：
ISTFA 2006 | 2006年
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：279 / +
页数：3
相关论文
共 50 条
  • [21] Secondary electron imaging as a two-dimensional dopant profiling technique: review and update
    Venables, D.
    Jain, H.
    Collins, D.C.
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1998, 16 (01):
  • [22] Beyond conventional secondary electron imaging using spectromicroscopy and its applications in dopant profiling
    Han, W.
    Srinivasan, A.
    Banerjee, A.
    Chew, M.
    Khursheed, A.
    MATERIALS TODAY ADVANCES, 2019, 2
  • [23] Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update
    Venables, D
    Jain, H
    Collins, DC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (01): : 362 - 366
  • [24] Chemical and electrochemical staining for two-dimensional dopant concentration profiling on ULSI silicon devices
    Spinella, C
    DEFECTS AND DIFFUSION IN SILICON PROCESSING, 1997, 469 : 323 - 328
  • [25] Silicon carbide microwave devices
    Eriksson, Joakim
    2002, Chalmers Tekniska Hogskolo
  • [26] Silicon carbide for power devices
    Palmour, JW
    Singh, R
    Glass, RC
    Kordina, O
    Carter, CH
    ISPSD '97: 1997 IEEE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, 1997, : 25 - 32
  • [27] Optoelectronics devices on silicon carbide
    Vlaskina, SI
    Kim, KW
    Kim, YS
    Lee, YP
    Svechnikov, GS
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1997, 31 (01) : 117 - 121
  • [28] DEMONSTRATING THE POTENTIAL OF 6H-SILICON CARBIDE FOR POWER DEVICES
    PALMOUR, JW
    EDMOND, JA
    CARTER, CH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (11) : 2129 - 2130
  • [29] Silicon carbide: Defects and devices
    Roccaforte, F
    Di Franco, S
    Giannazzo, F
    La Via, F
    Libertino, S
    Raineri, V
    Saggio, M
    Zanetti, E
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, 2005, 108-109 : 663 - 670
  • [30] Potential of Ultra-High Voltage Silicon Carbide Semiconductor Devices
    Johannesson, Daniel
    Nawaz, Muhammad
    Jacobs, Keijo
    Norrga, Staffan
    Nee, Hans-Peter
    2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2016, : 253 - 258
12345