Secondary Electron Potential Contrast for Dopant Profiling of Silicon Carbide Devices

被引：0
|
作者：
Buzzo, Marco [1 ]
Ciappa, Mauro [2 ]
Fichtner, Wolfgang [2 ]
机构：
[1] Infineon Technol, A-9500 Villach, Austria
[2] ETH Swiss Fed Inst Technol, CH-8092 Zurich, Switzerland
来源：
ISTFA 2006 | 2006年
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：279 / +
页数：3
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