A structural analysis of Bi/Si(100) 2 x n surfaces by ICISS

被引：1

作者：

Oishi, N ^{[1
]}

Saitoh, N

Naitoh, M

Nishigaki, S

Shoji, F

Nakanishi, S

Umezawa, K

机构：

[1] Kumamoto Natl Coll Technol, Kumamoto 8611102, Japan

[2] Kyushu Inst Technol, Kitakyushu, Fukuoka 8048550, Japan

[3] Kyushu Kyoritsu Univ, Dept Phys, Kitakyushu, Fukuoka 8078585, Japan

[4] Univ Osaka Prefecture, Sakai, Osaka 5998531, Japan

来源：

APPLIED SURFACE SCIENCE | 2003年 / 212卷

关键词：

impact-collision ion scattering spectroscopy; silicon; bismuth; surface structure;

D O I：

10.1016/S0169-4332(03)00115-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated the structure of Bi-adsorbed Si(I 0 0) 2 x n surfaces with various Bi coverages by low-energy. electron diffraction (LEED) and impact-collision ion scattering spectroscopy (ICISS). Intensities of He+ scattered from Bi and Si atoms were measured as a function of ion incidence angle. Bi-Bi interatomic distances for the toplayer including Bi-dimers were estimated by the shadow-cone technique. Bi-signal peaks appeared even at considerably large angles of incidence, which are attributed to collisions with Bi atoms in sub-surface layers. Bi adsorption is not completed at a mono-layer level, but continues to form multiple layers, fitted in the Si lattice, in the Frank-van der Merwe growth mode. (C) 2003 Published by Elsevier Science B.V.

引用

页码：373 / 377

页数：5

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