A structural analysis of Bi/Si(100) 2 x n surfaces by ICISS

被引：1
|
作者：
Oishi, N [1 ]
Saitoh, N
Naitoh, M
Nishigaki, S
Shoji, F
Nakanishi, S
Umezawa, K
机构：
[1] Kumamoto Natl Coll Technol, Kumamoto 8611102, Japan
[2] Kyushu Inst Technol, Kitakyushu, Fukuoka 8048550, Japan
[3] Kyushu Kyoritsu Univ, Dept Phys, Kitakyushu, Fukuoka 8078585, Japan
[4] Univ Osaka Prefecture, Sakai, Osaka 5998531, Japan
来源：
APPLIED SURFACE SCIENCE | 2003年 / 212卷
关键词：
impact-collision ion scattering spectroscopy; silicon; bismuth; surface structure;
D O I：
10.1016/S0169-4332(03)00115-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have investigated the structure of Bi-adsorbed Si(I 0 0) 2 x n surfaces with various Bi coverages by low-energy. electron diffraction (LEED) and impact-collision ion scattering spectroscopy (ICISS). Intensities of He+ scattered from Bi and Si atoms were measured as a function of ion incidence angle. Bi-Bi interatomic distances for the toplayer including Bi-dimers were estimated by the shadow-cone technique. Bi-signal peaks appeared even at considerably large angles of incidence, which are attributed to collisions with Bi atoms in sub-surface layers. Bi adsorption is not completed at a mono-layer level, but continues to form multiple layers, fitted in the Si lattice, in the Frank-van der Merwe growth mode. (C) 2003 Published by Elsevier Science B.V.
引用
收藏
页码：373 / 377
页数：5
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