Band offsets between amorphous LaAlO3 and In0.53Ga0.47As

被引：13

作者：

Goel, N. ^{[1
]}

Tsai, W.

Garner, C. M.

Sun, Y.

Pianetta, P.

Warusawithana, M.

Schlom, D. G.

Wen, H.

Gaspe, C.

Keay, J. C.

Santos, M. B.

Goncharova, L. V.

Garfunkel, E.

Gustafsson, T.

机构：

[1] Intel Corp, Santa Clara, CA 95052 USA

[2] Stanford Univ, Stanford Synchrotron Radiat Lab, Stanford, CA 94305 USA

[3] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[4] Univ Oklahoma, Homer L Dodge Dept Phys & Astron, Norman, OK 73019 USA

[5] Rutgers State Univ, Surface Modificat Lab, Piscataway, NJ 08854 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2783264

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The band offsets between an amorphous LaAlO3 dielectric prepared by molecular-beam deposition and a n-type In0.53Ga0.47As (001) layer have been measured using synchrotron radiation photoemission spectroscopy. The valence and conduction band offsets at the postdeposition annealed LaAlO3/InGaAs interface are 3.1 +/- 0.1 and 2.35 +/- 0.2 eV, respectively. The band gap of LaAlO3, as determined by Al 2p and O 1s core level energy loss spectra, is 6.2 +/- 0.1 eV. Within the resolution of the medium energy ion scattering technique, no interfacial oxide layer is seen between the InGaAs and the 3.6 nm thick amorphous LaAlO3.

引用

页数：3

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