Effect of Oxidation Temperature on the Structural, Optical and Electrical Properties of SnO2 Films

被引：1

作者：

Sethi, Riti ^{[1
]}

Aziz, Anver ^{[1
]}

Siddiqui, A. M. ^{[1
]}

机构：

[1] Jamia Millia Islamia, Dept Phys, New Delhi 110025, India

来源：

ADVANCED SCIENCE LETTERS | 2014年 / 20卷 / 7-9期

关键词：

Thermal Evaporation; X-Ray Diffraction; Optical Properties; I-V; Resistivity Measurements;

D O I：

10.1166/asl.2014.5564

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The synthesis of tin oxide films on glass substrates was carried out using a two-step procedure which involved the deposition of pure metallic tin films on glass substrates using the thermal evaporation technique and the oxidation of the as-prepared tin films at temperatures of 300, 400 and 500 degrees C. The effect of oxidation temperature on the structural, optical and electrical properties was investigated. The X-ray diffraction studies showed that the crystallinity of tin oxide films improved with increase in oxidation temperature with preferential growth along (110) plane. Increase in transmittance and band gap (2.95 eV to 3.23 eV) was observed with increase in oxidation temperature. Hall measurements revealed that the films showed n-type semiconducting behavior and the resistivity of the films increased as the oxidation temperature was increased from 300 degrees C to 500 degrees C.

引用

页码：1307 / 1310

页数：4

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