Electronic and optical structure of 1.55 μm emitting GaInNAs quantum dots on different substrates

We present a theoretical study which compares the electronic and optical properties of GaInNAs quantum dots (QD) with dilute amount of nitrogen (< 4%) on two different substrates, GaAs (001) and InP (001). The calculations are based on a 10 band k.p band-anti-crossing (BAC) Hamiltonian, incorporating valence, conduction and nitrogen-induced bands. We show that 1.55 mu m emission can be achieved on both substrates through appropriate tailoring of the QD size. On GaAs, the dominant dipole matrix element is the of the in-plane light polarization, whereas on InP substrate, the dominant component is of the perpendicular light polarization. Our results also identify the different In and N QD compositions required for long-wavelength emission on both material substrates.