Study of Growth Parameters for Single In As QD Formation on GaAs(001) Patterned Substrates by Local Oxidation Lithography

被引：8

作者：

Herranz, Jesus ^{[1
]}

Gonzalez, Luisa ^{[1
]}

Wewior, Lukasz ^{[1
]}

Alen, Benito ^{[1
]}

Fuster, David ^{[1
]}

Gonzalez, Yolanda ^{[1
]}

机构：

[1] CSIC, IMM, CNM, PTM, E-28760 Madrid, Spain

来源：

CRYSTAL GROWTH & DESIGN | 2015年 / 15卷 / 02期

关键词：

INAS QUANTUM DOTS; MOLECULAR-BEAM EPITAXY; GAAS; SURFACE;

D O I：

10.1021/cg5013632

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This work studies the selective nucleation of InAs within nanoholes on GaAs(001) substrates patterned by atomic force microscopy local oxidation. The effects of substrate temperature and As4 overpressure during InAs deposition directly on the patterned substrate (without a GaAs buffer layer) are considered. It is found that when InAs is deposited at substrate temperature of 510 degrees C under low As4 overpressure, a single InAs quantum dot per nanohole is obtained for a broad range of sizes of pattern motifs. The use of these InAs quantum dots as seed nuclei for vertical stacking of optically active single InAs site-controlled quantum dots is investigated.

引用

收藏

页码：666 / 672

页数：7

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