UV-Assisted Low Temperature Oxide Dielectric Films for TFT Applications

被引：44

作者：

Hwang, Jaeeun ^{[1
]}

Lee, Kyungmin ^{[1
]}

Jeong, Yesul ^{[2
,3
]}

Lee, Yong Uk ^{[4
]}

Pearson, Christopher ^{[2
,3
]}

Petty, Michael C. ^{[2
,3
]}

Kim, Hongdoo ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, South Korea

[2] Univ Durham, Sch Engn & Comp Sci, Durham DH1 3LE, England

[3] Univ Durham, Ctr Mol & Nanoscale Elect, Durham DH1 3LE, England

[4] Ctr Proc Innovat Ltd, Durham TS21 3FG, England

来源：

ADVANCED MATERIALS INTERFACES | 2014年 / 1卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

GATE DIELECTRICS; HIGH-PERFORMANCE; SOL-GEL; HIGH-KAPPA; TRANSISTORS; NITRATE; ZNO; FABRICATION; PHOTOLYSIS; DEVICES;

D O I：

10.1002/admi.201400206

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Solution-based oxide gate dielectric layers are prepared from metal nitrates using UV-assisted annealing at 150-C. The leakage current densities of ZrO2 and Al2O3 dielectrics are less than about 10-9 A/cm2 at 1 MV/cm and comparable to those formed by annealing at higher temperatures. High dielectric constants and the low leakage current behavior of the dielectric layers provide excellent ZnO TFT performance, with a field effect mobility of 1.37 cm2/V.s and an off-current density of 10-12 A/cm2. This low fabrication temperature process is compatible with future plastic electronics technology. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页数：9

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